28 citations · 51 across the 9 of their papers we have counts for
3 papers · 1 filter
Analog programming of CMOS-compatible AlO/TiO memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming
Pierre-Antoine Mouny, Raphaël Dawant, Bastien Galaup +4
The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, ou…
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
Yann Beilliard, François Paquette, Frédéric Brousseau +3
This study demonstrates multilevel switching at 1.5 K of Al2O3/TiO2-x resistive memory devices fabricated with CMOS-compatible processes and materials. The I-V characteristics exhi…
Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)
Yann Beilliard, François Paquette, Frédéric Brousseau +3
In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K…