3 papers
cond-mat.mes-hall2026
First Demonstration of Flip DRAM from Process, Architecture to System to Push DRAM Scaling beyond 4F2: 2F2 Self-aligned Flip Vertical Channel Transistor (FVCT) DRAM and Flip WL (FWL) 3D-DRAM
Yu Liu, Xinyue He, Yanbang Chu +19
For the first time, we proposed a novel stacking technology for DRAM scaling by flipping and backside processes, making full use of DRAM wafer's backside and investigating it on bo…
physics.app-ph2025
A Tale of Two Sides of Wafer: Physical Implementation and Block-Level PPA on Flip FET with Dual-sided Signals
Haoran Lu, Xun Jiang, Yanbang Chu +7
As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering cons…
cond-mat.mes-hall2024
From Flip FET to Flip 3D Integration (F3D): Maximizing the Scaling Potential of Wafer Both Sides Beyond Conventional 3D Integration
Heng Wu, Haoran Lu, Wanyue Peng +13
In this work, we proposed a new 3D integration technology: the Flip 3D integration (F3D), consisting of the 3D transistor stacking, the 3D dual-sided interconnects, the 3D die-to-d…