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cond-mat.mtrl-sci2007★ 6 cited
Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +8
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…
cond-mat.mtrl-sci2007★ 14 cited
Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +7
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambie…