23 citations · 43 across the 3 of their papers we have counts for
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Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +8
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallog…
Ferromagnetism in cobalt doped n-GaN
S. Dhara, B. Sundaravel, K. G. M. Nair +5
Ferromagnetic ordering is reported in the post-annealed samples of Co doped n-GaN formed by Co+ implantation. A maximum Curie temperature ~ 250K is recorded for the sample with 8 a…
Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
S. Dhara, P. Magudapathy, R. Kesavamoorthy +7
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambie…
Study of ion beam induced mixing in nano-layered Si/C multilayer structures
Ram Prakash, S. Amirthapandian, D. M. Phase +3
The effects of ion beam induced atomic mixing and subsequent thermal treatment in Si/C multilayer structures are investigated by use of the technique of grazing incidence X-ray dif…
Optical absorption and photoluminescence spectroscopy of the growth of silver nanoparticles
P. Gangopadhyay, R. Kesavamoorthy, Santanu Bera +4
Results obtained from the optical absorption and photoluminescence (PL) spectroscopy experiments have shown the formation of excitons in the silver-exchanged glass samples. These f…