46 citations · 85 across the 7 of their papers we have counts for
7 papers
Surface-switchable nonreciprocity protected by Fermi arcs in Weyl semimetal TaAs
Dong Li, Yuki M. Itahashi, Ying-Ming Xie +12
Weyl semimetals host topologically protected surface states, known as Fermi arcs, which connect bulk Weyl nodes in momentum space. Both bulk Weyl nodes and Fermi arcs are anticipat…
Charge density wave modulated third-order nonlinear Hall effect in 1-VSe nanosheets
Zhao-Hui Chen, Xin Liao, Jing-Wei Dong +5
We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1-phase VSe nanosheets, synthesized using chemical vapor deposition (CVD). The nanoshee…
Giant Third-Order Nonlinearity Induced by the Quantum Metric Quadrupole in Few-Layer WTe2
Xing-Yu Liu, An-Qi Wang, Dong Li +3
The quantum geometric properties of topological materials underpin many exotic physical phenomena and applications. Quantum nonlinearity has emerged as a powerful probe for reveali…
Orbital anomalous Hall effect in the few-layer Weyl semimetal TaIrTe4
An-Qi Wang, Dong Li, Tong-Yang Zhao +7
We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic Weyl semimetal TaIrTe4. This is achieved by applying a direct current Idc and an alternati…
Facilitating field-free perpendicular magnetization switching with a Berry curvature dipole in a Weyl semimetal
Dong Li, Xing-Yu Liu, Xing-Guo Ye +7
We report the synergy between orbital and spin-orbit torques in WTe2/Fe3GeTe2 heterostructures characterized by a Berry curvature dipole. By applying a current along the a axis in…
Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
Dong Li, Xing-Yu Liu, Zhen-Cun Pan +4
Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-…
Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories
Zhen-Cun Pan, Dong Li, Xing-Guo Ye +7
The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic com…