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cond-mat.mtrl-sci2011
Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization
V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats +2
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelength…
cond-mat.mtrl-sci2011★ 8 cited
Influence of Photoexcitation Depth on Luminescence Spectra of Bulk GaAs Single Crystals and Defect Structure Characterization
V. A. Yuryev, V. P. Kalinushkin, A. V. Zayats +2
The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelength…