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physics.app-ph2024★ 13 cited
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Joseph E. Dill, Chuan F. C. Chang, Debdeep Jena +1
We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ( cm/Vs) polar…
physics.app-ph2023
Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates
Shivali Agrawal, Len van Deurzen, Jimy Encomendero +7
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Curr…