20 citations · 25 across the 10 of their papers we have counts for
10 papers
On phase separation and crystallization of Ge-rich GeSbTe alloys from atomistic simulations with a machine learning interatomic potential
Omar Abou El Kheir, Dario Baratella, Marco Bernasconi
We developed a machine learning interatomic potential (MLIP) for Ge-rich GeSbTe alloys of interest for applications in phase change memories embedded in microcontrollers. The MLIP…
On the origin of in-gap states in amorphous GeSbTe
Omar Abou El Kheir, Marco Bernasconi
The localized states in the band gap of amorphous phase change alloys like GeSbTe control the electrical conduction via the Poole-Frenkel mechanism. Understanding the o…
Liquid anomalies and Fragility of Supercooled Antimony
Flavio Giuliani, Francesco Guidarelli Mattioli, Yuhan Chen +5
Phase-change materials (PCMs) based on group IV, V, and VI elements, such as Ge, Sb, and Te, exhibit distinctive liquid-state features, including thermodynamic anomalies and unusua…
Microscopic model of the operation of the Single-chalcogenide X-point Memory
P. Fantini, A. Ghetti, E. Varesi +8
Ovonic threshold switching is the key process for several applications of chalcogenide alloys including phase change memories and selector elements in cross-points arrays. Very rec…
Viscosity, breakdown of Stokes-Einstein relation and dynamical heterogeneity in supercooled liquid GeSbTe from simulations with a neural network potential
Simone Marcorini, Rocco Pomodoro, Omar Abou El Kheir +1
Phase change materials are exploited in non-volatile electronic memories and photonic devices that rely on a fast and reversible transformation between the amorphous and crystallin…
From Continuous to First-Order-Like: Amorphous-to-Amorphous Transition in Phase-Change Materials
Tomoki Fujita, Yoshio Kono, Yuhan Chen +13
Polymorphism is ubiquitous in crystalline solids. Amorphous solids, such as glassy water and silicon, may undergo amorphous-to-amorphous transitions (AATs). The nature of AATs rema…
Simulation of the crystallization kinetics of GeSbTe nanoconfined in superlattice geometries for phase change memories
Debdipto Acharya, Omar Abou El Kheir, Simone Marcorini +1
Phase change materials are the most promising candidates for the realization of artificial synapsis for neuromorphic computing. Different resistance levels corresponding to analogi…
Million-atom simulation of the set process in phase change memories at the real device scale
Omar Abou El Kheir, Marco Bernasconi
Phase change materials are exploited in several enabling technologies such as storage class memories, neuromorphic devices and memories embedded in microcontrollers. A key function…
Unveiling the crystallization kinetics in Ge-rich GeTe alloys by large scale simulations with a machine-learned interatomic potential
Dario Baratella, Omar Abou El Kheir, Marco Bernasconi
A machine-learned interatomic potential for Ge-rich GeTe alloys has been developed aiming at uncovering the kinetics of phase separation and crystallization in these materials.…
The (001) surface of alpha-Ga is covered with GaIII
M. Bernasconi, G. L. Chiarotti, E. Tosatti
We propose, based on ab initio calculations, that the ground state (001) surface of -Ga should be covered by two layers of GaIII, a denser phase which is stable in the bulk only…