activity
20232026
most citedIntegration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon

2 citations · 3 across the 5 of their papers we have counts for

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Showing cond-mat.mtrl-sciShow all

5 papers · 1 filter

cond-mat.mtrl-sci20261 cited

Tuning Structure and Magnetism in Large-Scale 2D Ferromagnet FeGeTe through Ni Doping

Kacho Imtiyaz Ali Khan, Tauqir Shinwari, Soheil Ershadrad +13

Two-dimensional ferromagnets with strong perpendicular magnetic anisotropy exhibit magnetic order down to the monolayer thickness, beneficial for energy-efficient spintronic device…

cond-mat.mtrl-sci20252 cited

Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon

Jingtian Zhao, Beatriz Noheda, Martin F. Sarott

Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these mat…

cond-mat.mtrl-sci2025

Polarity and anti-distortive polarons in WO3 through epitaxial shear strain

Ewout van der Veer, Martin F. Sarott, Jack T. Eckstein +11

Bestowing CMOS-compatible binary oxides with additional functionalities is a powerful strategy toward the realization of oxide electronics. Ideal candidates are thin films which di…

cond-mat.mtrl-sci2025

Electrically induced negative differential resistance states mediated by oxygen octahedra coupling in manganites for neuronaldynamics

Azminul Jaman, Lorenzo Fratino, Majid Ahmadi +4

The precipitous rise of consumer network applications reiterates the urgency to redefine computing hardware with low power footprint. Neuromorphic computing utilizing correlated ox…

cond-mat.mtrl-sci2023

Atomically resolved phase coexistence in VO2 thin films

Masoud Ahmadi, Atul Atul, Sytze de Graaf +7

Concurrent structural and electronic transformations in VO2 thin films are of twofold importance: enabling fine-tuning of the emergent electrical properties in functional devices,…