3 citations · 7 across the 5 of their papers we have counts for
4 papers · 1 filter
Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
Pietro Pampili, Vitaly Z. Zubialevich, Badal Mondal +4
In this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminium content AlGaN/AlGaN heterostructures. On the one hand, t…
Interplay of carrier density and mobility in Al-Rich (Al,Ga)N-Channel HEMTs: Impact on high-power device performance potential
Badal Mondal, Pietro Pampili, Jayjit Mukherjee +3
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V. For…
Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN
Pietro Pampili, Vitaly Z. Zubialevich, Peter J. Parbrook
In this study we report on a novel two-step epitaxial growth technique that enables a significant improvement of the crystal quality of nitrogen-polar GaN. The starting material is…
Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE
Pietro Pampili, Markus Pristovsek
We report about metalorganic vapour phase epitaxy of smooth nitrogen-polar AlN templates on vicinal (0001) sapphire substrates. The influence of V/III ratio, growth temperature, gr…