16 citations · 84 across the 22 of their papers we have counts for
10 papers · 1 filter
A Catalogue of Topological Moiré Bands in Twisted Semiconductors
Jiaheng Li, Yan Zhang, Jiaxuan Liu +5
Twisted two-dimensional semiconductors provide a route to flat and topological moiré minibands, but systematic principles for organizing their material dependence have remained unc…
A Geometric Design Principle for Topological Phases in Twisted Triangular-Lattice Bilayers
Jiaheng Li, Jiaxuan Liu, Yan Zhang +3
Twisted van der Waals bilayers provide a versatile platform for moiré electronic states, yet a transferable symmetry-based principle for time-reversal-invariant moir…
Nonsymmorphic Time-Reversal-Doubled Axion Insulators
Yue Xie, Haohao Sheng, Quansheng Wu +4
The axion insulator exhibits a topological magnetoelectric effect characterized by an axion angle , while the time-reversal-doubled axion insulator (T-DAXI) can be viewed as t…
Chern-Selective multi-valley Flat Bands in Twisted Mono-Bilayer and Mono-Trilayer MoTe
Ziyue Qi, Hanqi Pi, Yan Zhang +6
The interplay between moiré flat bands originating from different valleys can give rise to a variety of exotic quantum phases. In this work, we investigate the electronic propertie…
Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films
Jiaheng Li, Quansheng Wu, Hongming Weng
The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong…
Materials discovery acceleration by using condition generative methodology
Caiyuan Ye, Yuzhi Wang, Xintian Xie +10
With the rapid advancement of AI technologies, generative models have been increasingly employed in the exploration of novel materials. By integrating traditional computational app…
SDW driven "magnetic breakdown" in a d-wave altermagnet KVSeO
Xu Yan, Ziyin Song, Juntao Song +3
Altermagnets, combining zero net magnetization with intrinsic spin splitting, demonstrate unique quantum phenomena crucial for spintronic applications. KVSeO is proven to b…
Polarization-induced Quantum Spin Hall Insulator and Topological Devices in InAs Quantum Wells
Chenhao Liang, Sheng Zhang, Haohao Sheng +4
In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization fi…
Stacking-dependent Electronic and Topological Properties in van der Waals Antiferromagnet MnBiTe Films
Jiaheng Li, Quansheng Wu, Hongming Weng
Combining first-principles calculations and tight-binding Hamiltonians, we study the stack-dependent behaviour of electronic and topological properties of layered antiferromagnet M…
Complex field-, temperature-, and angle-dependent Hall effects from intrinsic Fermi surface revealed by first-principles calculations
ShengNan Zhang, Zhihao Liu, Hanqi Pi +3
The Hall effect, ever intriguing since its discovery, has spurred the exploration of its phenomena, intensified by advances in topology and novel materials. Differentiating the ord…