6 citations · 11 across the 3 of their papers we have counts for
3 papers
Random Telegraph Noise of MIS and MIOS Silicon Nitride memristors at different resistance states
N Vasileiadis, P Loukas, A Mavropoulis +4
Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of partic…
Analysis of random telegraph noise in resistive memories: The case of unstable filaments
Nikolaos Vasileiadis, Alexandros Mavropoulis, Panagiotis Loukas +2
Through Random Telegraph Noise (RTN) analysis, valuable information can be provided about the role of defect traps in fine tuning and reading of the state of a nanoelectronic devic…
Multi-level resistance switching and random telegraph noise analysis of nitride based memristors
Nikolaos Vasileiadis, Panagiotis Loukas, Panagiotis Karakolis +7
Resistance switching devices are of special importance because of their application in resistive memories (RRAM) which are promising candidates for replacing current nonvolatile me…