activity
20072026
most citedElectroluminescence from single nanowires by tunnel injection: an experimental study

28 citations · 167 across the 16 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mtrl-sci2026

The high K anomaly in ScAlN explained

Ilan Shalish

The integration of scandium aluminum nitride (ScAlN) into functional heterostructures has pushed semiconductor device physics into an extreme piezoelectric regime. Accurately deter…

cond-mat.mtrl-sci2024★ 8 cited

NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state

Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +2

Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of thi…

cond-mat.mtrl-sci2023★ 4 cited

Is the Mg-related GaN blue luminescence deep-level an MgO surface state?

Or Haim Chaulker, Yury Turkulets, Ilan Shalish

Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activat…

cond-mat.mtrl-sci2022★ 1 cited

Homologous self-assembled superlattices: What causes their periodic polarity switching? Review, model, and experimental test

Varun Thakur, Dor Benafsha, Yury Turkulets +4

Quantum semiconductor structures are commonly achieved by bandgap engineering that relies on the ability to switch from one semiconductor to another during their growth. Growth of…

cond-mat.mtrl-sci2022★ 15 cited

The GaN yellow-luminescence-related surface state and its interaction with air

Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +3

Yellow luminescence (YL) is probably the longest and most studied defect-related luminescence band in GaN, yet its electronic structure or chemical identity remain unclear. Most of…

cond-mat.mtrl-sci2018★ 3 cited

Polar charge induced self-assembly: An electric effect that causes non-isotropic nanorod growth in wurtzite semiconductors

Yury Turkulets, Ilan Shalish

Crystals grow by gathering and bonding of atoms to form an ordered structure. Typically, the growth is equally probable in all crystalline directions, but sometimes, it is not, as…

cond-mat.mtrl-sci2018★ 21 cited

Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy?

Almog R. Azulay, Yury Turkulets, Davide Del Gaudio +2

Images of uniform and upright nanowires are fascinating, but often, they are quite puzzling, when epitaxial templating from the substrate is clearly absent. Here, we reveal the phy…