17 citations · 18 across the 5 of their papers we have counts for
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XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski +4
AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effec…
Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
Yu-Hsin Chen, Jimy Encomendero, Huili Grace Xing +1
We report the observation of Shubnikov-de Haas (SdH) oscillations in coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including both undoped and -doped stru…
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…