4 citations · 5 across the 4 of their papers we have counts for
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Correlation Between Dopant Atom Evaporation Field and Measured Site Preference in Atom Probe Tomography
Kasper A. Hunnestad, Constantinos Hatzoglou, Frida H. Danmo +6
Complex oxides possess a wide range of electric, magnetic, and optical properties that can be precisely tuned by chemical doping. The atomic-scale analysis of the property-controll…
Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects
Jiali He, Ursula Ludacka, Kasper A. Hunnestad +12
Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and c…
Ferroelectric domain walls for environmental sensors
L. Richarz, I. C. Skogvoll, E. Y. Tokle +9
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes…
Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering
L. Zhou, L. Puntigam, P. Lunkenheimer +7
A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the materia…
Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions
K. Wolk, R. S. Dragland, E. Chavez Panduro +7
Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various…