8 citations · 11 across the 12 of their papers we have counts for
14 papers · 1 filter
Correlation Between Dopant Atom Evaporation Field and Measured Site Preference in Atom Probe Tomography
Kasper A. Hunnestad, Constantinos Hatzoglou, Frida H. Danmo +6
Complex oxides possess a wide range of electric, magnetic, and optical properties that can be precisely tuned by chemical doping. The atomic-scale analysis of the property-controll…
Atom Probe Tomography as an Emerging Tool for Understanding Defect-driven Mechanisms in HfO-based Ferroelectrics
Kasper A. Hunnestad, Catherine Dubourdieu, Alexei Gruverman +1
HfO-based ferroelectrics are essential for the next generation of CMOS-compatible memory and logic devices, yet their performance is governed by a complex interplay between o…
Control of helix orientation in chiral magnets via lateral confinement
Maurice Colling, Mariia Stepanova, Mario Hentschel +7
Helimagnetic materials offer a versatile platform for spin-based device concepts owing to their long-range, tunable spiral order. Here, we demonstrate controlled manipulation of th…
Chemical heterogeneity at conducting ferroelectric domain walls
Kasper A. Hunnestad, Guo-Dong Zhao, Mao-Hua Zhang +7
Natural interfaces in ferroic oxides have developed into versatile playgrounds for studying electronic correlation effects in 2D systems. The microscopic origin of the emergent loc…
Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides
Ivan N. Ushakov, Mats Topstad, Muhammad Z. Khalid +15
Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in en…
Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects
Jiali He, Ursula Ludacka, Kasper A. Hunnestad +12
Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and c…
Ferroelectric domain walls for environmental sensors
L. Richarz, I. C. Skogvoll, E. Y. Tokle +9
Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes…
Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions
K. Wolk, R. S. Dragland, E. Chavez Panduro +7
Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various…
Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric
Michele Conroy, Didrik René Småbråten, Colin Ophus +11
Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go w…
3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO)/(LuFeO) superlattices
K. A. Hunnestad, H. Das, C. Hatzoglou +7
Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbT…
Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction
Ursula Ludacka, Jiali He, Shuyu Qin +9
Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials…
Optimizing compositional and atomic-level information of oxides in atom probe tomography
Kasper Hunnestad, Constantinos Hatzoglou, Francois Vurpillot +5
Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing…
Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide
K. A. Hunnestad, J. Schultheiß, A. C. Mathisen +4
Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied i…
Atomic-scale 3D imaging of individual dopant atoms in a complex oxide
K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid +6
A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of se…