activity
20232026
most citedRoom-temperature sub-100 nm Néel-type skyrmions in non-stoichiometric van der Waals ferromagnet with ultrafast laser writability

85 citations · 222 across the 17 of their papers we have counts for

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13 papers · 1 filter

cond-mat.mes-hall2026

Observation of Kondo Effect in Rhombohedral Graphene Superlattices

Xin Liao, Qing Yin, Huiwen Wang +10

Kondo effect in strongly correlated systems arises from the antiferromagnetic coupling between itinerant conduction electrons and localized magnetic moments, giving rise to a varie…

cond-mat.mes-hall2025★ 4 cited

Magnetic Field Induced Quantum Metric Dipole in Dirac Semimetal Cd3As2

Tong-Yang Zhao, An-Qi Wang, Zhen-Tao Zhang +3

The quantum geometry, comprising Berry curvature and quantum metric, plays a fundamental role in governing electron transport phenomena in solids. Recent studies show that the quan…

cond-mat.mes-hall2025

From surface Fermi arcs to Fermi loops in the Dirac semimetal Cd3As2

An-Qi Wang, Tong-Yang Zhao, Chuan Li +3

Arc-like topological surface states, i.e., surface Fermi arcs, have long been recognized as the hallmark of Dirac semimetals. However, recent theories suggest that the surface Ferm…

cond-mat.mes-hall2025★ 7 cited

Charge density wave modulated third-order nonlinear Hall effect in 1-VSe nanosheets

Zhao-Hui Chen, Xin Liao, Jing-Wei Dong +5

We report the observation of a pronounced third-order nonlinear Hall effect (NLHE) in 1-phase VSe nanosheets, synthesized using chemical vapor deposition (CVD). The nanoshee…

cond-mat.mes-hall2025★ 5 cited

Engineering nonlinear Hall effect in bilayer graphene/black phosphorus heterostructures

Xing-Guo Ye, Zhen-Tao Zhang, Peng-Fei Zhu +3

Two-dimensional van der Waals materials offer a highly tunable platform for generating emergent quantum phenomena through symmetry breaking. Stacking-induced symmetry breaking at i…

cond-mat.mes-hall2025★ 13 cited

Giant Third-Order Nonlinearity Induced by the Quantum Metric Quadrupole in Few-Layer WTe2

Xing-Yu Liu, An-Qi Wang, Dong Li +3

The quantum geometric properties of topological materials underpin many exotic physical phenomena and applications. Quantum nonlinearity has emerged as a powerful probe for reveali…

cond-mat.mes-hall2024★ 2 cited

Nonlinear Valley and Spin Valves in Bilayer Graphene

Xin Liao, Xing-Yu Liu, An-Qi Wang +3

Nonlinear transport plays a vital role in probing the quantum geometry of Bloch electrons, valley chirality, and carrier scattering mechanisms. The nonlinear Hall effect, character…

cond-mat.mes-hall2024★ 7 cited

Nonlinear spin and orbital Edelstein effect in WTe2

Xing-Guo Ye, Peng-Fei Zhu, Wen-Zheng Xu +2

In materials with spin-momentum locked spin textures, such as Rashba states and topological surface states, the current-induced shift of the Fermi contour in the k space leads to s…

cond-mat.mes-hall2024★ 3 cited

Orbital anomalous Hall effect in the few-layer Weyl semimetal TaIrTe4

An-Qi Wang, Dong Li, Tong-Yang Zhao +7

We report on the observation of the linear anomalous Hall effect (AHE) in the nonmagnetic Weyl semimetal TaIrTe4. This is achieved by applying a direct current Idc and an alternati…

cond-mat.mes-hall2024★ 4 cited

Facilitating field-free perpendicular magnetization switching with a Berry curvature dipole in a Weyl semimetal

Dong Li, Xing-Yu Liu, Xing-Guo Ye +7

We report the synergy between orbital and spin-orbit torques in WTe2/Fe3GeTe2 heterostructures characterized by a Berry curvature dipole. By applying a current along the a axis in…

cond-mat.mes-hall2024★ 12 cited

Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4

Dong Li, Xing-Yu Liu, Zhen-Cun Pan +4

Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-…

cond-mat.mes-hall2023★ 46 cited

Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories

Zhen-Cun Pan, Dong Li, Xing-Guo Ye +7

The nonvolatile magnetoresistive random access memory (MRAM) is believed to facilitate emerging applications, such as in memory computing, neuromorphic computing and stochastic com…

cond-mat.mes-hall2023★ 31 cited

Gate-Tunable Berry Curvature Dipole Polarizability in Dirac Semimetal Cd3As2

Tong-Yang Zhao, An-Qi Wang, Xing-Guo Ye +3

We reveal the gate-tunable Berry curvature dipole polarizability in Dirac semimetal Cd3As2 nanoplates through measurements of the third-order nonlinear Hall effect. Under an applie…