79 citations · 188 across the 4 of their papers we have counts for
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Theoretical study of dislocation nucleation from simple surface defects in semiconductors
Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1
Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Althoug…
Comparison between classical potentials and ab initio for silicon under large shear
Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1
The homogeneous shear of the {111} planes along the <110> direction of bulk silicon has been investigated using ab initio techniques, to better understand the strain properties of…
Surface step effects on Si (100) under uniaxial tensile stress, by atomistic calculations
Julien Godet, Laurent Pizzagalli, Sandrine Brochard +1
This paper reports a study of the influence of the step at a silicon surface under an uniaxial tensile stress, using an empirical potential. Our aim was to find conditions leading…
Dislocation formation from a surface step in semiconductors: an ab initio study
Julien Godet, Sandrine Brochard, Laurent Pizzagalli +2
The role of a simple surface defect, such as a step, for relaxing the stress applied to a semiconductor, has been investigated by means of large scale first principles calculations…