111 citations · 203 across the 5 of their papers we have counts for
6 papers
Investigation of Deformation and Fracture Mechanisms in Two-dimensional Gallium Telluride Multilayers Using Nanoindentation
Yan Zhou, Shi Zhou, Penghua Ying +12
Two-dimensional (2D) materials possess great potential for flexible devices, ascribing to their outstanding electrical, optical, and mechanical properties. However, their mechanica…
Thermal stress modelling of diamond on GaN/III-Nitride membranes
Jerome A. Cuenca, Matthew D. Smith, Daniel E. Field +8
Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate potential, however, chemica…
High frequency guided mode resonances in mass-loaded, thin film gallium nitride surface acoustic wave devices
Stefano Valle, Manikant Singh, Martin Cryan +2
We demonstrate high-frequency (> 3 GHz), high quality factor radio frequency (RF) resonators in unreleased thin film gallium nitride (GaN) on sapphire and silicon carbide substrate…
Thick adherent diamond films on AlN with low thermal barrier resistance
Soumen Mandal, Jerome Cuenca, Fabien Massabuau +9
Growth of 100 m thick diamond layer adherent on aluminium nitride is presented in this work. While thick films failed to adhere on untreated AlN films, hydrogen/nitrogen plas…
Raman spectroscopy of (K,Na)NbO3 and ((K,Na)1-xLix)NbO3
H. J. Trodahl, N. Klein, D. Damjanovic +4
A Raman scattering spectroscopy study is reported through all four phases of a (K0.5Na0.5)NbO3 crystal and ((K0.5Na0.5)1-xLix)NbO3 for x=0.02 and 0.03. The transitions among the fe…
A Temperature Analysis of High-power AlGaN/GaN HEMTs
J. Das, H. Oprins, H. Ji +6
Galliumnitride has become a strategic superior material for space, defense and civil applications, primarily for power amplification at RF and mm-wave frequencies. For AlGaN/GaN hi…