activity
20232026
most citedDistillation of atomistic foundation models across architectures and chemical domains

7 citations · 9 across the 17 of their papers we have counts for

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8 papers · 1 filter

cond-mat.mtrl-sci2026

Amorphous materials as a frontier challenge for universal interatomic potentials

Natascia L. Fragapane, Volker L. Deringer

Pre-trained or 'foundational' machine-learned interatomic potentials (MLIPs) are now widely used in materials modelling. However, early pre-trained models and benchmarks have large…

cond-mat.mtrl-sci2026

Atomistic Mechanisms of Hard Carbon Formation from Polyvinylidene Chloride

Litong Wu, Zitong Wu, Zakariya El-Machachi +1

Hard carbons are a class of disordered materials with widespread application in energy storage. Despite decades of research, their atomistic formation mechanisms have remained elus…

cond-mat.mtrl-sci2026

A Defect-Free Model of Amorphous Silicon with Pristine Electronic Structure

Louise A. M. Rosset, Chinonso Ugwumadu, Stephen R. Elliott +2

Amorphous silicon (a-Si) is understood to be the canonical continuous random network material, ideally defined by fully fourfold coordination. Here, we show that a defect-free ('id…

cond-mat.mtrl-sci2026

Synthetic pre-training of graph-network models for predicting solid-state NMR parameters

Chiheb Ben Mahmoud, Carlos Bornes, Christopher J. Heard +3

Nuclear magnetic resonance (NMR) is a powerful probe of atomic structure, but accurate quantum-mechanical predictions of tensorial NMR parameters are computationally demanding. Thi…

cond-mat.mtrl-sci2025

Medium-range structural order in amorphous arsenic

Yuanbin Liu, Yuxing Zhou, Richard Ademuwagun +4

Medium-range order (MRO) is a key structural feature of amorphous materials, but its origin and nature remain elusive. Here, we reveal the MRO in amorphous arsenic (a-As) using adv…

cond-mat.mtrl-sci2025★ 1 cited

Full-cycle device-scale simulations of memory materials with a tailored atomic-cluster-expansion potential

Yuxing Zhou, Daniel F. Thomas du Toit, Stephen R. Elliott +2

Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to acc…

cond-mat.mtrl-sci2024

The pathway to chirality in elemental tellurium

Yuxing Zhou, Stephen R. Elliott, Daniel F. Thomas du Toit +2

Chiral crystals, like chiral molecules, cannot be superimposed onto their mirror images -- a fundamental property that has been linked to interesting physical behavior and exploite…

cond-mat.mtrl-sci2024

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors

Jieling Tan, Jiang-Jing Wang, Hang-Ming Zhang +6

Main-group layered binary semiconductors, in particular, the III-VI alloys in the binary Ga-Te system are attracting increasing interest for a range of practical applications. The…