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cond-mat.mtrl-sci2026
Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
Hossein Zandipour, Felix Kaps, Robin Buschbeck +19
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant conc…
cond-mat.mtrl-sci2024
Lattice dynamics of LiNbTaO solid solutions: Theory and experiment
Felix Bernhardt, Soham Gharat, Alexander Kapp +8
Lithium niobate (LNO) and lithium tantalate (LTO) see widespread use in fundamental research and commercial technologies reaching from electronics over classical optics to integrat…