4 citations · 4 across the 9 of their papers we have counts for
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Uncovering the properties of homo-epitaxial GaN devices through cross-sectional infrared nanoscopy
Hossein Zandipour, Felix Kaps, Robin Buschbeck +19
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant conc…
Tailoring phonon-driven responses in α-MoO3 through isotopic enrichment
Thiago S. Arnaud, Ryan W. Spangler, Johnathan D. Georgaras +29
The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material is…
Polarization sensitivity in scattering-type scanning near-field optical microscopy -- towards nanoellipsometry
Felix G. Kaps, Susanne C. Kehr, Lukas M. Eng
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length…