4 citations · 4 across the 5 of their papers we have counts for
6 papers
In-DRAM Signature Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Off-The-Shelf DRAM Chips
Umut Baser, Ismail Emir Yuksel, F. Nisa Bostanci +7
We experimentally demonstrate that it is possible to generate unique, repeatable, and device-specific signatures suitable for use as Physical Unclonable Function (PUF) responses in…
EasyDRAM: An FPGA-based Infrastructure for Fast and Accurate End-to-End Evaluation of Emerging DRAM Techniques
Oğuzhan Canpolat, Ataberk Olgun, David Novo +2
DRAM is a critical component of modern computing systems. Recent works propose numerous techniques (that we call DRAM techniques) to enhance DRAM-based computing systems' throughpu…
Understanding RowHammer Under Reduced Refresh Latency: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions
Yahya Can Tuğrul, A. Giray Yağlıkçı, İsmail Emir Yüksel +6
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victi…
Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance
Oğuzhan Canpolat, A. Giray Yağlıkçı, Geraldo F. Oliveira +6
We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Countin…
Understanding the Security Benefits and Overheads of Emerging Industry Solutions to DRAM Read Disturbance
Oğuzhan Canpolat, A. Giray Yağlıkçı, Geraldo F. Oliveira +3
We present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Counting (…
BreakHammer: Enhancing RowHammer Mitigations by Carefully Throttling Suspect Threads
Oğuzhan Canpolat, A. Giray Yağlıkçı, Ataberk Olgun +5
RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows.…