Marco Peres

collaborators

6 papers

cond-mat.mtrl-sci2026

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

Inês Freitas, Ana Sofia Sousa, Duarte Magalhães Esteves +6

Gallium oxide (Ga $_{2}$ O $_{3}$ ) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applic…

cond-mat.mtrl-sci2026

Au and Ag nanoparticles produced by ion implantation in single-crystalline $β$ -Ga $_{2}$ O $_{3}$

Duarte Magalhães Esteves, Ana Sofia Sousa, Inês Freitas +5

This work reports the successful formation of Ag and Au nanoparticles in $β$ -Ga $_{2}$ O $_{3}$ single-crystals by ion implantation and annealing at 550 °C. X-ray diffraction measurements…

cond-mat.mtrl-sci2026

Understanding the anisotropic response of $β$ -Ga $_{2}$ O $_{3}$ to ion implantation

Duarte Magalhães Esteves, Ru He, Sérgio Magalhães +8

While $β$ -Ga $_{2}$ O $_{3}$ is considered a promising wide bandgap semiconductor, the impact of ion-induced defect formation and anisotropic elasticity remains poorly understood. Here, w…

cond-mat.mtrl-sci2026

Study on the Effect of Annealing on Ga $_{2}$ O $_{3}$ Thin Films Deposited on Silicon by RF Sputtering

Ana Sofia Sousa, Duarte M. Esteves, Tiago T. Robalo +3

Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices.…

cond-mat.mtrl-sci2025

UV photodetectors and field-effect transistors based on $β$ -Ga $_{2}$ O $_{3}$ nanomembranes produced by ion-beam-assisted exfoliation

Miguel Cardoso Pedro, Duarte Magalhães Esteves, Daniela Rodrigues Pereira +4

$β$ -Ga $_{2}$ O $_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as p…

cond-mat.mtrl-sci2025

Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga $_{2}$ O $_{3}$ Thin Films Deposited on c-plane Sapphire by RF Sputtering

Ana Sofia Sousa, Duarte M. Esteves, Tiago T. Robalo +4

Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-e…

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga2​O3​ thin films

Au and Ag nanoparticles produced by ion implantation in single-crystalline β-Ga2​O3​

Understanding the anisotropic response of β-Ga2​O3​ to ion implantation

Study on the Effect of Annealing on Ga2​O3​ Thin Films Deposited on Silicon by RF Sputtering

UV photodetectors and field-effect transistors based on β-Ga2​O3​ nanomembranes produced by ion-beam-assisted exfoliation

Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga2​O3​ Thin Films Deposited on c-plane Sapphire by RF Sputtering

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

Au and Ag nanoparticles produced by ion implantation in single-crystalline $β$ -Ga $_{2}$ O $_{3}$

Understanding the anisotropic response of $β$ -Ga $_{2}$ O $_{3}$ to ion implantation

Study on the Effect of Annealing on Ga $_{2}$ O $_{3}$ Thin Films Deposited on Silicon by RF Sputtering

UV photodetectors and field-effect transistors based on $β$ -Ga $_{2}$ O $_{3}$ nanomembranes produced by ion-beam-assisted exfoliation

Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga $_{2}$ O $_{3}$ Thin Films Deposited on c-plane Sapphire by RF Sputtering