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20232025
most citedMechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC

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cond-mat.mtrl-sci2024

Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD

François Cauwet, Yamina Benamra, Laurent Auvray +2

The chemical vapor deposition (CVD) growth of boron carbide (B x C) layers on 4H-SiC, 4{\textdegree}off substrates was studied. Depending on the polarity of the substrate, differen…