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cond-mat.mtrl-sci2025
Ferroelectric amplitude switching and continuous memory
Gye-Hyeon Kim, Tae Hyun Jung, Seungjoon Sun +11
Although ferroelectric systems inherently exhibit binary switching behavior, recent advances in analog memory device have spurred growing interest in achieving continuous memory st…
cond-mat.mtrl-sci2025★ 2 cited
Tunneling magnetoresistance in altermagnetic RuO-based magnetic tunnel junctions
Seunghyeon Noh, Gye-Hyeon Kim, Jiyeon Lee +11
Altermagnets exhibit characteristics akin to antiferromagnets, with spin-split anisotropic bands in momentum space. RuO has been considered as a prototype altermagnet; however,…