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Junjie Zhou

4 papers hereh-index 18 citations4 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author3
  • middle author1

Across the 4 of 4 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci4
same name
  • Junjie Zhou — 11 papers, h 9
  • Junjie Zhou — 6 papers, h 3
  • Junjie Zhou — 5 papers, h 2
  • Junjie Zhou — 3 papers, h 1
  • Junjie Zhou — 3 papers, h 2
  • Junjie Zhou — 2 papers, h 5

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

collaborators

4 papers

cond-mat.mtrl-sci2026

Predicting large-supercell defect formation energies from machine-learning charge density models trained on small supercells

Junjie Zhou, Menglin Huang, Shiyou Chen

First-principles defect calculations are often limited by the cost of the large supercells required to suppress image interactions. Machine-learning interatomic potentials (MLIPs)…

cond-mat.mtrl-sci2026

Nonradiative Multiphonon Model of Deep-Level Transient Spectroscopy: Beyond Henry-Lang Model

Menglin Huang, Shanshan Wang, Junjie Zhou +2

Deep-level transient spectroscopy (DLTS) is a key experimental method for defect characterization, yet its analysis remains controversial, and the two widely used models developed…

cond-mat.mtrl-sci2025

"One defect, one potential" strategy for accurate machine learning prediction of defect phonons

Junjie Zhou, Xinpeng Li, Menglin Huang +1

Atomic vibrations play a critical role in phonon-assisted electron transitions at defects in solids. However, accurate phonon calculations in defect systems are often hindered by t…

cond-mat.mtrl-sci2025

Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors

Junjie Zhou, Shanshan Wang, Menglin Huang +2

As a typical nonradiative multiphonon transition in semiconductors, carrier capture at defects is critical to the performance of semiconductor devices. Its transition rate is usual…

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