2 papers
cond-mat.mtrl-sci2025
Carrier Emission and Capture Competition mediated A(n)BC Recombination Model in Semiconductors with Multi-Level Defects
Shanshan Wang, Menglin Huang, Su-Huai Wei +2
The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend…
cond-mat.mtrl-sci2025
Defect Phonon Renormalization during Nonradiative Multiphonon Transitions in Semiconductors
Junjie Zhou, Shanshan Wang, Menglin Huang +2
As a typical nonradiative multiphonon transition in semiconductors, carrier capture at defects is critical to the performance of semiconductor devices. Its transition rate is usual…