12 citations · 16 across the 3 of their papers we have counts for
3 papers
Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration
Juan Cuesta-Lopez, Mohit D. Ganeriwala, Enrique G. Marin +4
The continuous effort in making artificial neural networks more alike to human brain calls for the hardware elements to implement biological synapse-like functionalities. The recen…
Understanding Memristive Behavior: An Atomistic Study of the Influence of Grain Boundaries on Surface and Out-of-Plane Diffusion of Metallic Atoms
Mohit D. Ganeriwala, Daniel Luque-Jarava, Francisco Pasadas +4
Atomic migration from metallic contacts, and subsequent filament formation, is recognised as a prevailing mechanism leading to resistive switching in memristors based on two-dimens…
Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors
Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel +11
Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attribu…