High Breakdown Field Multi-kV UWBG AlGaN Transistors

Seungheon Shin, Kyle Liddy, Jon Pratt +6

We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm)…