activity
20042011
most citedLandau Theory of Domain Wall Magnetoelectricity

148 citations · 297 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2011★ 87 cited

Intrinsic activation energy for twin wall motion

W. T. Lee, E. K. H. Salje, L. Goncalves-Ferreria +2

Even in a topologically perfect crystal, a moving twin wall will experience forces due to the discrete nature of the lattice. The potential energy landscape can be described in ter…

cond-mat.mtrl-sci2010★ 148 cited

Landau Theory of Domain Wall Magnetoelectricity

Maren Daraktchiev, Gustau Catalan, James F. Scott

We calculate the exact analytical solution to the domain wall properties in a multiferroic system with two order parameters that are coupled bi-quadratically. This is then adapted…

cond-mat.mtrl-sci2007

Effects of carbon nanotubes on grain boundary sliding in zirconia polycrystals

M. Daraktchiev, B. Van de Moortele, R. Schaller +2

Mechanical properties of zirconia polycrystals decrease drastically at high temperature due to thermally activated grain boundary (GB) sliding, leading to plastic or even super-pla…

cond-mat.mtrl-sci2007★ 27 cited

Effect of internal friction on transformation twin dynamics in SrxBa1-xSnO3 perovskite

M. Daraktchiev, E. Salje, W. Lee +1

The dynamics of transformation twins in SrxBa1-xSnO3 (x=0.6,0.8) perovskite has been studied by dynamical mechanical analysis in three-point bend geometry. This material undergoes…

cond-mat.mtrl-sci2007★ 2 cited

How do the grains slide in fine-grained zirconia polycrystals at high temperature?

M. Daraktchiev, R. Schaller, L. Gremillard +3

Degradation of mechanical properties of zirconia polycrystals is hardly discussed in terms of solution-precipitation grain-boundary sliding due to experimental controversies over i…

cond-mat.mtrl-sci2004★ 33 cited

Ultrathin Organic Transistors on Oxide Surfaces

Maren Daraktchiev, Adrian von Muehlenen, Frank Nuesch +4

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistor…