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researcher

H. Gan

2 papers hereh-index 164.2k citations41 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
same name
  • H. Gan — 17 papers, h 14
  • H. Gan — 16 papers, h 22
  • H. Gan — 12 papers, h 6
  • H. Gan — 6 papers, h 5
  • H. Gan — 1 paper, h 1
  • H. Gan — 1 paper, h 1

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedMgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

140 citations · 140 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2009★ 140 cited

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, S. Ikeda, J. H. Park +7

The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with…

cond-mat.mtrl-sci2007

Evidence for the intrinsic ferromagnetism of semiconductor (Ga,Cr)As revealed by magnetic circular dichroism

H. D. Gan, H. Z. Zheng, J. F. Bi +6

To clarify whether or not (Ga,Cr)As is an intrinsic diluted magnetic semiconductor, a systematic study of the magnetic circular dichroism (MCD) was carried out for a series of (Ga,…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.