220 citations · 298 across the 7 of their papers we have counts for
7 papers
On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films
Piotr Kruszewski, Jose Coutinho, Vladimir P. Markevich +6
The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grow…
Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors
H. Selvi, N. Unsuree, E. Whittaker +4
Graphene-Silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating s…
Pressure coefficients of Raman modes of carbon nanotubes resolved by chirality: Environmental effect on graphene sheet
A. J. Ghandour, I. F. Crowe, J. E. Proctor +5
Studies of the mechanical properties of single-walled carbon nanotubes are hindered by the availability only of ensembles of tubes with a range of diameters. Tunable Raman excitati…
Raman excitation spectroscopy of carbon nanotubes: effects of pressure medium and pressure
A. J. Ghandour, A. Sapelkin, I. Hernandez +3
Raman excitation and emission spectra for the radial breathing mode (RBM) are reported, together with a preliminary analysis. From the position of the peaks on the two-dimensional…
Graphene under hydrostatic pressure
John E. Proctor, Eugene Gregoryanz, Konstantin S. Novoselov +3
In-situ high pressure Raman spectroscopy is used to study monolayer, bilayer and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results sho…
Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells
D. Seliuta, J. Kavaliauskas, B. Cechavicius +8
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{…