activity
20072022
most citedField Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

212 citations · 215 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2022★ 2 cited

Advantages of optical modulation in terahertz imaging for study of graphene layers

Rusnė Ivaškevičiūtė-Povilauskienė, Alesia Paddubskaya, Dalius Seliuta +7

It was demonstrated that optical modulation together with simultaneous terahertz (THz) imaging application enables an increase in contrast by an order of magnitude illustrating hen…

cond-mat.mes-hall2021

Observation of the Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice

Vladislovas Čižas, Liudvikas Subačius, Natalia V. Alexeeva +5

Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum superlattices allow to invest…

cond-mat.mes-hall2009★ 212 cited

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

W. Knap, M. Dyakonov, D. Coquillat +11

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear…

cond-mat.mtrl-sci2007

Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells

D. Seliuta, J. Kavaliauskas, B. Cechavicius +8

Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{…

cond-mat.mtrl-sci2007

Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells

D. Seliuta, B. Cechavicius, J. Kavaliauskas +10

The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz…

cond-mat.mtrl-sci2007★ 1 cited

Electric field gradient induced effects in GaAs/AlGaAs modulation-doped structures and high frequency sensing

D. Seliuta, A. Juozapavicius, V. Gruzinskis +9

Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature r…