212 citations · 228 across the 9 of their papers we have counts for
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Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs
J. Kundrotas, A. Cerskus, G. Valusis +4
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible m…
Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells
D. Seliuta, J. Kavaliauskas, B. Cechavicius +8
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{…
Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells
D. Seliuta, B. Cechavicius, J. Kavaliauskas +10
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz…
Electric field gradient induced effects in GaAs/AlGaAs modulation-doped structures and high frequency sensing
D. Seliuta, A. Juozapavicius, V. Gruzinskis +9
Electric field gradient effects induced by an asymmetrically in-plane shaped GaAs/AlGaAs modulation-doped structures of various design are investigated within 4-300 K temperature r…