Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Yannick Baines, Julien Buckley, Jérôme Biscarrat +5

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN di…