On the origin of the E1 electron trap level in GaN and dilute AlxGa1-xN films

Piotr Kruszewski, Jose Coutinho, Vladimir P. Markevich +6

The results of high-resolution Laplace deep-level transient spectroscopy (L-DLTS) measurements applied to the E1 and FeGa electron traps in dilute AlxGa1-xN films (x = 0.063), grow…