26 citations · 49 across the 8 of their papers we have counts for
Showing 2010Show all
2 papers · 1 filter
cond-mat.mtrl-sci2010★ 8 cited
Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping
Bilal Gokce, David E. Aspnes, Gerald Lucovsky +1
It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidat…
cond-mat.mtrl-sci2010
Real-time observation of bond-by-bond interface formation during the oxidation of (111) Si
B. Gokce, E. J. Adles, D. E. Aspnes +1
Atomic-level structure of solids is typically determined by techniques such as X-ray and electron diffraction,1, 2, 3, 4 which are sensitive to atomic positions. It is hardly neces…