activity
20072015
most citedIntrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

3.2k citations · 3.8k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2015★ 16 cited

Electronic transport properties of Ir-decorated graphene

Yilin Wang, Shudong Xiao, Xinghan Cai +3

Graphene decorated with 5d transitional metal atoms is predicted to exhibit many intriguing properties; for example iridium adatoms are proposed to induce a substantial topological…

cond-mat.mtrl-sci2015★ 386 cited

Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment

Rusen Yan, Sara Fathipour, Yimo Han +8

Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can po…

cond-mat.mes-hall2009★ 100 cited

Charged impurity scattering in bilayer graphene

Shudong Xiao, Jian-Hao Chen, Shaffique Adam +2

We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature.…

cond-mat.mtrl-sci2008★ 117 cited

Diffusive Charge Transport in Graphene on SiO2

J. -H. Chen, C. Jang, M. Ishigami +3

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic va…

cond-mat.mtrl-sci2007★ 3.2k cited

Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

J. H. Chen, C. Jang, S. Xiao +2

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is…