activity
20072020
most citedElectrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

34 citations · 85 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2020

Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field

Alaa E. Giba, Xue Gao, Mathieu Stoffel +10

We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electrolumine…

cond-mat.mtrl-sci2020★ 32 cited

Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods

P. Barate, S. Liang, T. T. Zhang +16

An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is…

cond-mat.mes-hall2018★ 34 cited

Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

F. Cadiz, A. Djeffal, D. Lagarde +18

The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electro…

cond-mat.mtrl-sci2015★ 19 cited

Possible atomic structures for the sub-bandgap absorption of chalcogen hyperdoped silicon

Ke-Fan Wang, Hezhu Shao, Kong Liu +3

Single-crystal silicon wafers were hyperdoped respectively by sulfur, selenium, and tellurium element using ion implantation and nanosecond laser melting. The hyperdoping of such c…

cond-mat.mes-hall2007

Research progress of electronic properties of self-assembled semiconductor quantum dots

Jie Sun, Peng Jin, Zhanguo Wang

Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface…

cond-mat.mes-hall2007

Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer

Jie Sun, Peng Jin, Chang Zhao +5

Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal c…