34 citations · 66 across the 5 of their papers we have counts for
5 papers
Spin-injection and spin-relaxation in p-doped InGaAs/GaAs quantum-dot spin light emitting diode at zero magnetic field
Alaa E. Giba, Xue Gao, Mathieu Stoffel +10
We report on efficient spin injection in p-doped InGaAs/GaAs quantum-dot (QD) spin light emitting diode (spin-LED) under zero applied magnetic field. A high degree of electrolumine…
Electrical spin injection into InGaAs/GaAs quantum wells: a comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods
P. Barate, S. Liang, T. T. Zhang +16
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is…
Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field
F. Cadiz, A. Djeffal, D. Lagarde +18
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electro…
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
Jie Sun, Peng Jin, Chang Zhao +5
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal c…
Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
Jie Sun, Ruoyuan Li, Chang Zhao +5
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current,…