2 papers
cond-mat.mes-hall2007
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
Jie Sun, Peng Jin, Chang Zhao +5
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal c…
cond-mat.mes-hall2007
Room temperature observation of electron resonant tunneling through InAs/AlAs quantum dots
Jie Sun, Ruoyuan Li, Chang Zhao +5
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current,…