activity
20232026
most citedTunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

66 citations · 88 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mtrl-sci2026

Cocktail effect and robust Berry curvature driven anomalous Hall conductivity in the entropy-stabilized Heusler alloy Co(TiVCrFe)Al

Suraj Kushwaha, S. K. Panda, Sourav Marik +2

The interplay between chemical disorder and persistence of Berry curvature driven transport phenomena remains an important open question in entropy-stabilized systems. Here, we syn…

cond-mat.mtrl-sci2025

Two-dimensional antiferromagnets with non-relativistic spin splitting switchable by electric polarization

Himanshu Mavani, Kai Huang, Kartik Samanta +1

Spin-split antiferromagnets have significance for antiferromagnetic (AFM) spintronics due to their momentum dependent spin polarization which can be exploited for the control and d…

cond-mat.mtrl-sci2024★ 13 cited

Prediction of polarization vortices, charge modulation, flat bands, and moiré magnetism in twisted oxide bilayers

Naafis Ahnaf Shahed, Kartik Samanta, Mohamed Elekhtiar +5

The recent surge of interest in moiré superlattices of twisted van der Waals compounds has spotlighted the emergence of unconventional superconductivity and novel electronic phases…

cond-mat.mtrl-sci2024

Spin filtering with insulating altermagnets

Kartik Samanta, Ding-Fu Shao, Evgeny Y. Tsymbal

Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may…

cond-mat.mtrl-sci2024

Two-dimensional non-volatile valley spin valve

Kai Huang, Kartik Samanta, Ding-Fu Shao +1

A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission being controlled by the relati…

cond-mat.mtrl-sci2024

Antiferroelectric Hafnia Down to the 2D Limit

Xin Li, Guodong Ren, Haidong Lu +16

Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for ene…

cond-mat.mtrl-sci2024★ 4 cited

Symmetry-controlled SrRuO3/SrTiO3/SrRuO3 magnetic tunnel junctions:Spin polarization and its relevance to tunneling magnetoresistance

Kartik Samanta, Evgeny Y. Tsymbal

Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spi…

cond-mat.mtrl-sci2023★ 66 cited

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode

Kartik Samanta, Yuan-Yuan Jiang, Tula R. Paudel +2

Magnetic tunnel junctions (MTJs) are key components of spintronic devices, such as magnetic random-access memories. Normally, MTJs consist of two ferromagnetic (FM) electrodes sepa…

cond-mat.mtrl-sci2023★ 5 cited

Prediction of Giant Tunneling Magnetoresistance in RuO/TiO/RuO (110) Antiferromagnetic Tunnel Junctions

Yuan-Yuan Jiang, Zi-An Wang, Kartik Samanta +6

Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist…