9 citations · 10 across the 2 of their papers we have counts for
2 papers
physics.app-ph2024★ 1 cited
Simplified EPFL GaN HEMT Model
Farzan Jazaeri, Majid Shalchian, Ashkhen Yesayan +4
This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID ). Relying o…
physics.app-ph2024★ 9 cited
AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
Pieter Cardinael, Sachin Yadav, Herwig Hahn +11
Fabrication of low-RF loss GaN-on-Si HEMT stacks is critical to enable competitive front-end-modules for 5G and 6G applications. The main contribution to RF losses is the interface…