12 citations · 14 across the 3 of their papers we have counts for
3 papers
On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
Jules Duraz, Hassen Souissi, Maksym Gromovyi +12
The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transm…
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram +14
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-o…
Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
Fatima Z. Tijent, Mustapha Faqir, Paul L. Voss +2
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a pas…