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20152025
most citedOptically addressable silicon vacancy-related spin centers in rhombic silicon carbide with high breakdown characteristics and ENDOR evidence of their structure

73 citations · 112 across the 7 of their papers we have counts for

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cond-mat.mtrl-sci2017★ 15 cited

Strain broadening of the 1042-nm zero-phonon line of the NV- center in diamond: a promising spectroscopic tool for defect tomography

T. B. Biktagirov, A. N. Smirnov, V. Yu. Davydov +4

The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center'…