1 citations · 1 across the 3 of their papers we have counts for
6 papers
Type III Valley Polarization and Anomalous Valley Hall Effect in Two-Dimensional Non-Janus and Janus Altermagnet Fe2WS2Se2
Yanchao She, Yiding Wang, Hanbo Sun +3
Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization ma…
Valley Polarization and Anomalous Valley Hall Effect in Altermagnet Ti2Se2S with Multipiezo Properties
Xin Hu, Weihang Zhao, Wenjun Xia +4
Recently, altermagnets demonstrate numerous newfangle physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, that are anticipated to en…
Coexisting Triferroic and Multiple Types of Valley Polarization by Structural Phase Transition in Two-Dimensional Materials
Chao Wu, Hanbo Sun, Pengqiang Dong +2
The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of…
Multifield Induced Antiferromagnet Transformation into Altermagnet and Realized Anomalous Valley Hall Effect in Two-dimensional Materials
Hanbo Sun, Pengqiang Dong, Chao Wu +1
Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Cur…
Stacking, Strain-Engineering Induced Altermagnetism, Multipiezo Effect, and Topological State in Two-Dimensional Materials
Wei Xun, Xin Liu, Youdong Zhang +2
Altermagnetism, as a newly identified form of unconventional antiferromagnetism, enables the removal of spin degeneracy in the absence of net magnetization that provides a platform…
Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices
Hanbo Sun, Yewei Ren, Chao Wu +4
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials.…