1 citations · 1 across the 5 of their papers we have counts for
5 papers
Type III Valley Polarization and Anomalous Valley Hall Effect in Two-Dimensional Non-Janus and Janus Altermagnet Fe2WS2Se2
Yanchao She, Yiding Wang, Hanbo Sun +3
Exploiting the valley degree of freedom introduces a novel paradigm for advancing quantum information technology. Currently, the investigation on spontaneous valley polarization ma…
Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr
Yiding Wang, Hanbo Sun, Chao Wu +4
Compared to the ferromagnetic materials that realize the anomalous valley Hall effect by breaking time-reversal symmetry and spin-orbit coupling, the antiferromagnetic materials wi…
Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices
Hanbo Sun, Yewei Ren, Chao Wu +4
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials.…
Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials
Wei Xun, Chao Wu, Hanbo Sun +3
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely c…
Progress on two-dimensional ferrovalley materials
Ping Li, Bang Liu, Wei-Xi Zhang +1
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of free…