11 citations · 11 across the 5 of their papers we have counts for
5 papers
Sliding ferroelectricity tunable conventional and anomalous spin Hall effects in bilayer 1T'-WTe2
Chao Wu, Pengqiang Dong, Kai Wei +2
The spin Hall effect, recognized for its high-speed, low-power, and highly controllable characteristics, is a key enabler for next-generation memory and logic devices. However, a p…
Sliding Ferroelectricity Induced and Switched Altermagnetism in GaSe-VPSe3-GaSe Sandwiched Heterostructure with Strong Magnetoelectric Effect
Pengqiang Dong, Hanbo Sun, Chao Wu +1
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which…
Coexisting Triferroic and Multiple Types of Valley Polarization by Structural Phase Transition in Two-Dimensional Materials
Chao Wu, Hanbo Sun, Pengqiang Dong +2
The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of…
Multifield Induced Antiferromagnet Transformation into Altermagnet and Realized Anomalous Valley Hall Effect in Two-dimensional Materials
Hanbo Sun, Pengqiang Dong, Chao Wu +1
Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Cur…
Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices
Hanbo Sun, Yewei Ren, Chao Wu +4
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials.…