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Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
Johnny C. Ho, Roie Yerushalmi, Gregory Smith +5
We report the formation of sub-5 nm ultrashallow junctions in 4 inch Si wafers enabled by the molecular monolayer doping of phosphorous and boron atoms and the use of conventional…
Diameter-Dependent Electron Mobility of InAs Nanowires
Alexandra Ford, Johnny Ho, Yu-Lun Chueh +5
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties…
Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires
Alexandra C. Ford, Johnny C. Ho, Zhiyong Fan +5
InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation.…
Wafer-Scale Assembly of Semiconductor Nanowire Arrays by Contact Printing
Zhiyong Fan, Johnny C. Ho, Zachery A. Jacobson +4
Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration…