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Performance Analysis of 60nm gate length III-V InGaAs HEMTs: Simulations vs. experiments
Neophytos Neophytou, Titash Rakshit, Mark S. Lundstrom
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model…
Bandstructure Effects in Silicon Nanowire Hole Transport
Neophytos Neophytou, Abhijeet Paul, Gerhard Klimeck
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin…
Bandstructure Effects in Silicon Nanowire Electron Transport
Neophytos Neophytou, Abhijeet Paul, Mark Lundstrom +1
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp…
Simulations of Nanowire Transistors: Atomistic vs. Effective Mass Models
Neophytos Neophytou, Abhijeet Paul, Mark S. Lundstrom +1
The ballistic performance of electron transport in nanowire transistors is examined using a 10 orbital sp3d5s* atomistic tight-binding model for the description of the electronic s…